Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• , a 100 nm thick transparent tin-doped indium oxide (In2O3:Sn, ITO) was deposited at low power and low temperature, using radio-frequency (RF) magnetron sputtering. The cell area was defined as 5 mm × 5 mm, using a mask during ITO deposition. The reported equivalent thickness values of thin films on

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• achieved at all [19][20]. Metal-oxide semiconductors (MOS), including tin oxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), copper oxide (CuO), tungsten oxide (WO3), indium oxide (In2O3), ferric oxide (Fe2O3) and cobalt oxide (Co3O4) are important materials for gas sensors [21][22][23][24][25][26

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• ], Co3O4 [113][114], iron oxide (Fe2O3) [115][116], tin dioxide (SnO2) [76][117][118][119][120][121][122][123], zinc oxide (ZnO) [124][125][126][127][128][129][130], and indium oxide (In2O3) [78][80][131][132][133][134][135][136][137][138]. Table S2 in Supporting Information File 1 summarizes the sensing

Ammonia gas sensors based on In₂O₃/PANI hetero-nanofibers operating at room temperature

• Qingxin Nie,
• Zengyuan Pang,
• Hangyi Lu,
• Yibing Cai and
• Qufu Wei

Beilstein J. Nanotechnol. 2016, 7, 1312–1321, doi:10.3762/bjnano.7.122

• electrospinning, and then hollow structure indium oxide (In2O3) nanofibers were obtained through calcination with PVP as template material. In situ polymerization was used to prepare indium oxide/polyaniline (In2O3/PANI) composite nanofibers with different mass ratios of In2O3 to aniline. The structure and

• ] and WO3 [12] have been reported. Indium oxide (In2O3) is an n-type semiconductor with a band gap of approximately 3.55–3.75 eV, which has been widely used due to its excellent electrical and optical properties. In2O3 also exhibits sensitivity to various vapors and gases, such as NO2 [13], CO [14], H2

Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

• Mikalai V. Malashchonak,
• Sergey K. Poznyak,
• Eugene A. Streltsov,
• Anatoly I. Kulak,
• Olga V. Korolik and
• Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

• . Keywords: cadmium sulfide (CdS); indium oxide (In2O3); nanoparticles; successive ionic layer adsorption and reaction (SILAR); Introduction In third-generation solar cells molecular dyes (in the Grätzel cells [1]) as well as nanoparticles of semiconducting metal chalcogenides (CdS, CdSe, CdTe, PbS, PbSe

• thoroughly washed and ultrasonically treated after the addition of a small amount of nitric acid as a stabilizer to obtain a stable sol at a concentration of 120 g/L. To prepare indium oxide In2O3(400) films with mesoporous structure, block-copolymer Pluronic F127 (100 g/L) as a template material was added